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DETERMINATION OF THE LIQUID INTERACTION PARAMETERS OF INP, INAS, GAAS, AND GAP IN THE RANGE 580-670^OCPEREA EH; FONSTAD CG.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 2; PP. 313-315; BIBL. 13 REF.Article

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EFFECT OF LONGITUDINAL VARIATIONS IN CURRENT INJECTION AND CARRIER CONCENTRATION IN LASER DIODESCARNEY JK; FONSTAD CG JR.1983; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1983; VOL. 19; NO 1; PP. 22-28; BIBL. 8 REF.Article

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GAIN SATURATION IN SEMICONDUCTOR LASERS: THEORY AND EXPERIMENTKASEMSET D; FONSTAD CG JR.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 7; PP. 1078-1083; BIBL. 18 REF.Article